The role of the InGaAs surface in selective area epitaxy of quantum dots by indium segregation

MLA

James J. Coleman, et al. “The Role of the InGaAs Surface in Selective Area Epitaxy of Quantum Dots by Indium Segregation.” Applied Physics Letters, vol. 84, Apr. 2004, pp. 3031–33. EBSCOhost, https://doi.org/10.1063/1.1705731.

APA

James J. Coleman, Victor C. Elarde, R.B. Swint, & T.S. Yeoh. (2004). The role of the InGaAs surface in selective area epitaxy of quantum dots by indium segregation. Applied Physics Letters, 84, 3031–3033. https://doi.org/10.1063/1.1705731

Chicago

James J. Coleman, Victor C. Elarde, R.B. Swint, and T.S. Yeoh. 2004. “The Role of the InGaAs Surface in Selective Area Epitaxy of Quantum Dots by Indium Segregation.” Applied Physics Letters 84 (April): 3031–33. doi:10.1063/1.1705731.