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Enhanced light extraction in light-emitting diodes with photonic crystal structure selectively grown on p-GaN

Authors :
Chu-Young Cho
Ki Seok Kim
Se-Eun Kang
Yong-Seok Choi
Sang-Jun Lee
Sang-Heon Han
Gun Young Jung
Seong-Ju Park
Source :
Applied Physics Letters. 96:181110
Publication Year :
2010
Publisher :
AIP Publishing, 2010.

Abstract

We report on the properties of green light-emitting diodes (LEDs) with a photonic crystal (PC) structure on p-GaN. A PC structure was fabricated by the selective area epitaxy of p-GaN using SiO2 nanopillars. The electrical characteristics of LEDs with PC were not degraded and the optical output power of green LEDs with PC was increased by 70% at 20 mA of injection current compared with that of conventional LEDs without PC. This enhancement of optical output power was attributed to the improvement in light extraction efficiency by the SiO2/p-GaN PC layer on p-GaN.

Details

ISSN :
10773118 and 00036951
Volume :
96
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........3aa26ff8c7cd95b28d7aee79f5920e4d
Full Text :
https://doi.org/10.1063/1.3427352