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Enhanced light extraction in light-emitting diodes with photonic crystal structure selectively grown on p-GaN
- Source :
- Applied Physics Letters. 96:181110
- Publication Year :
- 2010
- Publisher :
- AIP Publishing, 2010.
-
Abstract
- We report on the properties of green light-emitting diodes (LEDs) with a photonic crystal (PC) structure on p-GaN. A PC structure was fabricated by the selective area epitaxy of p-GaN using SiO2 nanopillars. The electrical characteristics of LEDs with PC were not degraded and the optical output power of green LEDs with PC was increased by 70% at 20 mA of injection current compared with that of conventional LEDs without PC. This enhancement of optical output power was attributed to the improvement in light extraction efficiency by the SiO2/p-GaN PC layer on p-GaN.
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 96
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........3aa26ff8c7cd95b28d7aee79f5920e4d
- Full Text :
- https://doi.org/10.1063/1.3427352