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Preparation and characterization of Ni(111)/graphene/Y2O3(111) heterostructures
- Source :
- Journal of Applied Physics. 113:194305
- Publication Year :
- 2013
- Publisher :
- AIP Publishing, 2013.
-
Abstract
- Integration of graphene with other materials by direct growth, i.e., not using mechanical transfer procedures, is investigated on the example of metal/graphene/dielectric heterostructures. Such structures may become useful in spintronics applications using graphene as a spin-filter. Here, we systematically discuss the optimization of synthesis procedures for every layer of the heterostructure and characterize the material by imaging and diffraction methods. 300 nm thick contiguous (111) Ni-films are grown by physical vapor deposition on YSZ(111) or Al2O3(0001) substrates. Subsequently, chemical vapor deposition growth of graphene in ultra-high vacuum (UHV) is compared to tube-furnace synthesis. Only under UHV conditions, monolayer graphene in registry with Ni(111) has been obtained. In the tube furnace, mono- and bilayer graphene is obtained at growth temperatures of ∼800 °C, while at 900 °C, non-uniform thick graphene multilayers are formed. Y2O3 films grown by reactive molecular beam epitaxy in UHV covers the graphene/Ni(111) surface uniformly. Annealing to 500 °C results in crystallization of the yttria with a (111) surface orientation.
Details
- ISSN :
- 10897550 and 00218979
- Volume :
- 113
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics
- Accession number :
- edsair.doi...........3a8347982ccd03cf2d933bb17669d155