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Microstructure and mechanical properties of silicon carbide processed by Spark Plasma Sintering (SPS)
- Source :
- Ceramics International. 38:6335-6340
- Publication Year :
- 2012
- Publisher :
- Elsevier BV, 2012.
-
Abstract
- The unique combination of SiC properties opens the ways for a wide range of SiC-based industrial applications. Dense silicon carbide bodies (3.18±0.01 g/cm 3 ) were obtained by an SPS treatment at 2050 °C for 10 min using a heating rate of 400 °C/min, under an applied pressure of 69 MPa. The microstructure consists of fine, equiaxed grains with an average grain size of 1.29±0.65 μm. TEM analysis showed the presence of nano-size particles at the grain boundaries and at the triple-junctions, formed mainly from the impurities present in the starting silicon carbide powder. The HRTEM examination revealed high angle and clean grain boundaries. The measured static mechanical properties ( H V =32 GPa, E =440 GPa, σ b =490 MPa and K C 6.8 MPa m 0.5 ) and the Hugoniot Elastic Limit (HEL=18 GPa) are higher than those of hot-pressed silicon carbide samples.
- Subjects :
- Equiaxed crystals
Materials science
Process Chemistry and Technology
Metallurgy
Spark plasma sintering
Microstructure
Grain size
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
chemistry.chemical_compound
chemistry
Impurity
Materials Chemistry
Ceramics and Composites
Silicon carbide
Grain boundary
High-resolution transmission electron microscopy
Subjects
Details
- ISSN :
- 02728842
- Volume :
- 38
- Database :
- OpenAIRE
- Journal :
- Ceramics International
- Accession number :
- edsair.doi...........3a75ec9341d52df70b0a971767475ee8