On the InGaP/In(x)Ga(1-x)As Pseudomorphic High Electron-Mobility Transistor s with High-Temperature Reliabilities

Authors :: Kun-Wei Lin
W.L. Chang
Wen-Shiung Lour
K.H. Yu
Wen-Chau Liu
C.H. Yen
K.P. Lin
Source :: 30th European Solid-State Device Research Conference.
Publication Year :: 2000
Publisher :: IEEE, 2000.

Subjects :: chemistry.chemical_compound
Materials science
chemistry
business.industry
Heterojunction bipolar transistor
Silicon carbide
Degradation (geology)
Optoelectronics
High-electron-mobility transistor
business
Indium gallium arsenide
Gallium arsenide

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