The influence of NiSO4 saturation on the electrophysical mesoporous silicon layers obtained by electrochemical method

Authors :: I. B. Mysenko
Viktor V. Galushka
D. I. Bilenko
D. V. Terin
Source :: 2012 International Conference on Actual Problems of Electron Devices Engineering.
Publication Year :: 2012
Publisher :: IEEE, 2012.
Abstract: The influence of NiSO 4 saturation on the electrophysical mesoporous silicon layers obtained by electrochemical method are investigated.

Subjects :: Semiconductor thin films
Porous semiconductors
Nickel
Materials science
chemistry
Chemical engineering
Silicon
Nickel compounds
chemistry.chemical_element
Electrochemistry
Mesoporous material
Saturation (magnetic)

Database :: OpenAIRE
Journal :: 2012 International Conference on Actual Problems of Electron Devices Engineering
Accession number :: edsair.doi...........39b5a7772884c6cbf2287696f3b936fb

Tools