Activation and Defect Reduction of Hydrogenated In–Ga–Zn–O Thin Film Transistor at Low Temperature (150 °C)

Authors :: M. Furuta
Y. Hirota
Y. Magari
S.G.M. Aman
Source :: Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials.
Publication Year :: 2018
Publisher :: The Japan Society of Applied Physics, 2018.

Subjects :: Reduction (complexity)
Materials science
Thin-film transistor
Analytical chemistry

Database :: OpenAIRE
Journal :: Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials
Accession number :: edsair.doi...........398cba56cf73bc02a4f24693b1db0ee1

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