Back to Search Start Over

Interline CCD image sensor with an anti blooming structure

Authors :
Nobukazu Teranishi
E. Takeuchi
Y. Ishihara
T. Kamata
E. Oda
I. Akiyama
M. Nishimura
K. Arai
H. Tanigawa
Source :
1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.
Publication Year :
1982
Publisher :
IEEE, 1982.

Abstract

THE APPLICATION OF AN overflow drain and barrier positioned beside the photosensitive area? has made it possible to suppress blooming of CCD image sensors. However, this method was found to sacrifice photosensitivity and dynamic range. This paper will describe an interline CCD sensor where the vertical overflow drain is positioned under, rather than beside the photodiode. Thus the cell area can now be used effectively for photoelectron generation and storage, and increased photosensitivity and dynamic range can be maintained. Furthermore, this technique eliminates the blooming phenomenon.

Details

Database :
OpenAIRE
Journal :
1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers
Accession number :
edsair.doi...........39597832003e12e3ebecaaca73113b08
Full Text :
https://doi.org/10.1109/isscc.1982.1156370