A system for radiation damage monitoring

Authors :: Mark I. Reinhard
L. Peak
N. Freeman
Dimitri Alexiev
D. G. Marinaro
Anatoly B. Rosenfeld
P. Ihnat
G. C. Taylor
M.L.F. Lerch
Source :: IEEE Transactions on Nuclear Science. 46:1766-1773
Publication Year :: 1999
Publisher :: Institute of Electrical and Electronics Engineers (IEEE), 1999.
Abstract: An automatic radiation damage monitoring system has been developed and tested. The system is based on two passive sensors for the measurement of integral ionizing and non-ionizing energy losses in silicon devices. Ionizing dose is measured in terms of dose in SiO/sub 2/ and displacement damage in terms of 1 MeV(Si) equivalent neutron fluence. The system uses MOSFETs and PIN dosimetric diodes.