Design Optimization of InAs-Based Gate-All-Around (GAA) Arch-Shaped Tunneling Field-Effect Transistor (TFET)

Authors :: Cho Seongjae
Kang In Man
Lee Jung-Hee
JO Young-Woo
Seo Jae Hwa
Son Dong-Hyeok
Kwon Hyuck‐In
Yoon Young Jun
Source :: Journal of Nanoscience and Nanotechnology. 16:10199-10203
Publication Year :: 2016
Publisher :: American Scientific Publishers, 2016.

Subjects :: Materials science
business.industry
Tunneling field effect transistor
Biomedical Engineering
Optoelectronics
General Materials Science
Bioengineering
General Chemistry
Arch
Condensed Matter Physics
business

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