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Complementary GaAs SIS FET inverter using selective crystal regrowth technique by MBE
- Source :
- IEEE Electron Device Letters. 7:182-184
- Publication Year :
- 1986
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 1986.
-
Abstract
- A first complementary GaAs semiconductor-insulator-semiconductor (SIS) FET inverter has been fabricated by constructing n-channel and p-channel GaAs SIS FET's on a single LEC GaAs substrate using MBE selective crystal regrowth technique. The fabricated inverter shows an inverter operation as a really low-power complementary inverter.
- Subjects :
- Materials science
business.industry
Integrated circuit
Epitaxy
Isotropic etching
Electronic, Optical and Magnetic Materials
Threshold voltage
law.invention
Gallium arsenide
chemistry.chemical_compound
Ion implantation
chemistry
law
Electronic engineering
Inverter
Optoelectronics
Field-effect transistor
Electrical and Electronic Engineering
business
Subjects
Details
- ISSN :
- 07413106
- Volume :
- 7
- Database :
- OpenAIRE
- Journal :
- IEEE Electron Device Letters
- Accession number :
- edsair.doi...........3910f0b98bf80c7b5caef6bd0355d58f
- Full Text :
- https://doi.org/10.1109/edl.1986.26337