Back to Search
Start Over
AlInGaN/GaN HEMTs with Different GaN Cap Layer on Low Resistivity Silicon Substrate
- Source :
- 2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
- Publication Year :
- 2022
- Publisher :
- IEEE, 2022.
Details
- Database :
- OpenAIRE
- Journal :
- 2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
- Accession number :
- edsair.doi...........3903e90a89f208f8ed16d6b008a86fc0