Tailor-made Laser Chip by Bonding for High Energy Laser System

Authors :: Rui Zhang
Yosuke Honda
Mitsuhiro Yoshida
Takunori Taira
Akihiro Tsuji
Xiangyu Zhou
Vincent Yahia
Arvydas Kausas
Source :: 2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D).
Publication Year :: 2021
Publisher :: IEEE, 2021.
Abstract: Multi-stack chips comprised of sapphire and Nd3+:YAG crystals with variable doping concentration were made by surface activated bonding technology. By use of sophisticated amplification setup for end-pumped solid-state laser, >2J operation with nanosecond pulses was obtained under room temperature.

Subjects :: Surface activated bonding
Materials science
business.industry
law
Doping
Sapphire
Optoelectronics
High energy laser
Nanosecond
Chip
business
Laser
law.invention

Database :: OpenAIRE
Journal :: 2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)
Accession number :: edsair.doi...........3880c102af95a493a3796d5ff4738d2a

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