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Enhanced carrier lifetime and diffusion length in GaAs by strained-layer MOCVD
- Source :
- IEEE Electron Device Letters. 7:101-103
- Publication Year :
- 1986
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 1986.
-
Abstract
- It is shown that by MOCVD growth of a single strained GaAs:In layer, the quality of epitaxial GaAs material can be remarkably enhanced. This is demonstrated with respect to lifetimes and diffusion lengths of minority carriers. This technique permits an improvement of the quality of electronic and optoelectronic bipolar devices.
- Subjects :
- congenital, hereditary, and neonatal diseases and abnormalities
Materials science
business.industry
Doping
nutritional and metabolic diseases
Schottky diode
Carrier lifetime
Electronic, Optical and Magnetic Materials
Gallium arsenide
Atomic layer deposition
chemistry.chemical_compound
chemistry
Electronic engineering
Optoelectronics
Charge carrier
Metalorganic vapour phase epitaxy
Electrical and Electronic Engineering
Diffusion (business)
business
Subjects
Details
- ISSN :
- 07413106
- Volume :
- 7
- Database :
- OpenAIRE
- Journal :
- IEEE Electron Device Letters
- Accession number :
- edsair.doi...........3850a498afeda0b0c70e433bb425a29b
- Full Text :
- https://doi.org/10.1109/edl.1986.26308