Suppression of off-state drain leakage current in AlGaN channel high electron mo-bility transistors on SiC substrate

Authors :: Yuji Abe
Takuma Nanjo
H. Ohji
H. Okazaki
Eiji Yagyu
Imai Akifumi
Muneyoshi Suita
Yosuke Suzuki
Source :: Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials.
Publication Year :: 2012
Publisher :: The Japan Society of Applied Physics, 2012.

Subjects :: Materials science
business.industry
law
Sic substrate
Transistor
Optoelectronics
State (computer science)
business
High electron
Communication channel
law.invention

Database :: OpenAIRE
Journal :: Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials
Accession number :: edsair.doi...........3825d8d4dd211bb322b842702da07d2c

Tools