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Diffusion lengths of excited carriers in CdxZn1−xSe quantum wells
- Source :
- Applied Physics Letters. 74:741-743
- Publication Year :
- 1999
- Publisher :
- AIP Publishing, 1999.
-
Abstract
- Diffusion lengths of excited carriers in a CdxZn1−xSe multiple quantum well structure were determined for temperatures between room temperature and 8 K from cathodoluminescence measurements. The diffusion length was found to depend upon temperature and Cd concentration of the quantum well. For the highest Cd concentration (x=0.43), the diffusion length increased with temperature up to 225 K and then dropped at higher temperatures. Diffusion lengths were 0.21 μm at 8 K, 0.38 μm at 225 K, and 0.24 μm at room temperature. For the well with least Cd concentration (x=0.24), longer diffusion lengths were obtained. The nature of the diffusing carriers is also discussed.
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 74
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........3812f6fe82eb4dd11f2953599b4b7efe