Optical properties of InAs epilayers grown on GaAs by molecular beam epitaxy

MLA

Jung Bum Choi, et al. “Optical Properties of InAs Epilayers Grown on GaAs by Molecular Beam Epitaxy.” Journal of Crystal Growth, vol. 234, Jan. 2002, pp. 110–14. EBSCOhost, https://doi.org/10.1016/s0022-0248(01)01666-9.

APA

Jung Bum Choi, Sam Kyu Noh, Jae-Young Leem, Jong Su Kim, Se-Kyung Kang, Joo In Lee, Seung Il Ban, Jin Soo Kim, & Gu Hyun Kim. (2002). Optical properties of InAs epilayers grown on GaAs by molecular beam epitaxy. Journal of Crystal Growth, 234, 110–114. https://doi.org/10.1016/s0022-0248(01)01666-9

Chicago

Jung Bum Choi, Sam Kyu Noh, Jae-Young Leem, Jong Su Kim, Se-Kyung Kang, Joo In Lee, Seung Il Ban, Jin Soo Kim, and Gu Hyun Kim. 2002. “Optical Properties of InAs Epilayers Grown on GaAs by Molecular Beam Epitaxy.” Journal of Crystal Growth 234 (January): 110–14. doi:10.1016/s0022-0248(01)01666-9.