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The effect of multi active junctions on broadband emission from InAs/InGaAlAs quantum-dash structure
- Source :
- 2009 IEEE LEOS Annual Meeting Conference Proceedings.
- Publication Year :
- 2009
- Publisher :
- IEEE, 2009.
-
Abstract
- We demonstrate the importance of multi active layer stacking in realizing a semiconductor broadband quantum-dash-in-well laser. The photoluminescence measurements show the negligible factor of largely localized inhomogeneous quantum-dash ensembles in producing ultra-wide envelope of emission.
- Subjects :
- Photoluminescence
Materials science
Condensed Matter::Other
business.industry
Physics::Optics
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Laser
law.invention
Active layer
Gallium arsenide
chemistry.chemical_compound
Optics
Semiconductor
chemistry
Quantum dot laser
Quantum dot
law
Computer Science::Multimedia
Optoelectronics
business
Envelope (waves)
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- 2009 IEEE LEOS Annual Meeting Conference Proceedings
- Accession number :
- edsair.doi...........37aa1d56673792cca2f372e692e1ea0b
- Full Text :
- https://doi.org/10.1109/leos.2009.5343093