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Experimental Study of 3D Fin-Channel Charge Trapping Flash Memories with TiN Metal and Poly-Si Gates

Authors :
Shin-ichi O'uchi
Yoshie Ishikawa
Y. X. Liu
Shinji Migita
Junichi Tsukada
Wataru Mizubayashi
Takashi Matsukawa
M. Masahara
Hiromi Yamauchi
Hiroyuki Ota
Kazuhiko Endo
Yukinori Morita
Source :
Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials.
Publication Year :
2013
Publisher :
The Japan Society of Applied Physics, 2013.

Subjects

Subjects :
Materials science
business.industry
chemistry.chemical_element
Nanotechnology
Charge (physics)
Trapping
Fin (extended surface)
Metal
Flash (photography)
chemistry
visual_art
visual_art.visual_art_medium
Optoelectronics
Tin
business
Communication channel

Details

Database :
OpenAIRE
Journal :
Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials
Accession number :
edsair.doi...........3737417c3e56d03c77397f15621545b2
Full Text :
https://doi.org/10.7567/ssdm.2013.a-4-3
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