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The evolution of the structure of quantum size effect Pb nanocrystals on Si(111) 7×7

The evolution of the structure of quantum size effect Pb nanocrystals on Si(111) 7×7

Authors :
C. Kim
E. H. Conrad
Michael C. Tringides
Paul F. Miceli
R. Feng
Source :
Physica B: Condensed Matter. 357:175-179
Publication Year :
2005
Publisher :
Elsevier BV, 2005.

Abstract

We have carried out diffuse X-ray scattering measurements of the growth of Pb nanocrystalline islands on Si(1 1 1). Analysis of our data shows that islands growing on an initially rough wetting layer transforms the portion of the wetting layer below them into ordered fcc sites. Therefore, the islands grow directly on top of the Si surface with a disordered wetting layer occupying the region between the islands and, consequently, the island height responsible for the quantum well depth is one layer thicker than reported by LEED and STM. These islands have an extremely good vertical order until the islands coalesce into a closed film. At that point the disorder of the film increases consistent with misfit strain relaxation.

Details

ISSN :
09214526
Volume :
357
Database :
OpenAIRE
Journal :
Physica B: Condensed Matter
Accession number :
edsair.doi...........3713c9125efcd79396179d40cd839575
Full Text :
https://doi.org/10.1016/j.physb.2004.11.051