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High Performance and Electro-Mechanical Stability in Small Molecule: Polymer Blend Flexible Organic Field-Effect Transistors
- Source :
- IEEE Electron Device Letters. 37:1215-1218
- Publication Year :
- 2016
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2016.
-
Abstract
- High-performance solution processed flexible organic field-effect transistors with 6,13(bis-triisopropylsily-lethynyl) pentacene and polystyrene blend are demonstrated with high electro-mechanical stability. For −5 V operation, field-effect mobility up to 1.1 cm $^{2}~\text{V}^{\mathrm {-1}}~\text{s}^{\mathrm {-1}}$ and threshold voltage as low as −0.1 V were obtained with high current on–off ratios of $\sim 10^{5}$ due to high quality dielectric–semiconductor interface developed during solvent evaporation. Stable electrical characteristics were achieved with increasing duration of mechanical strain, and after multiple cycles of tensile and compressive strain. Drain current decay of 10%, very large trapping time of $\sim 10^{8}$ s, and a very small threshold voltage shift of 0.3 V were observed during bias stress of 1 h, signifying low charge carrier trapping and a high quality of dielectric–semiconductor interface, which was retained largely after two days of continuous tensile strain. Moreover, after 100 cycles of tensile and compressive strain, the corresponding shift in threshold voltage due to bias stress was still $\sim 0.5$ V. Overall, a high performance and stability were demonstrated under collective effects of mechanical and electrical stress.
- Subjects :
- Materials science
Analytical chemistry
02 engineering and technology
010402 general chemistry
021001 nanoscience & nanotechnology
01 natural sciences
0104 chemical sciences
Electronic, Optical and Magnetic Materials
Threshold voltage
Stress (mechanics)
Pentacene
chemistry.chemical_compound
chemistry
Ultimate tensile strength
Electronic engineering
Charge carrier
Field-effect transistor
Polymer blend
Polystyrene
Electrical and Electronic Engineering
0210 nano-technology
Subjects
Details
- ISSN :
- 15580563 and 07413106
- Volume :
- 37
- Database :
- OpenAIRE
- Journal :
- IEEE Electron Device Letters
- Accession number :
- edsair.doi...........36fb3423a642bd9a28d52eecc50f82ec