Si/Ge films on laterally structured surfaces: An x‐ray study of conformal roughness

X‐ray diffraction measurements in the region of small incidence and exit angles on thin amorphous silicon/germanium films on laterally structured surfaces are performed. From fits of the data we obtain directly how the Fourier components of the substrates propagate through the evaporated films without being influenced by the intrinsic statistical roughness of the interfaces. The results show that a replication factor extracted from a given model can be quantitatively tested with our measurements.