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Structural changes during annealing of GaInAsN
- Source :
- Applied Physics Letters. 78:748-750
- Publication Year :
- 2001
- Publisher :
- AIP Publishing, 2001.
-
Abstract
- The alloy GaInAsN has great potential as a lower-band-gap material lattice matched to GaAs, but there is little understanding of what causes its poor optoelectronic properties and why these improve with annealing. This study provides information about the structural changes that occur when GaInAsN is annealed. The Fourier transform infrared spectra exhibit two primary features: a triplet at ∼470 cm−1 (Ga–N stretch) and two or three bands at ∼3100 cm−1 (N–H stretch). The change in the Ga–N stretch absorption can be explained if the nitrogen environment is converted from NGa4 to NInGa3 after annealing. The N–H stretch is also changed after annealing, implying a second, and unrelated, structural change.
- Subjects :
- Physics and Astronomy (miscellaneous)
Annealing (metallurgy)
Alloy
Analytical chemistry
Infrared spectroscopy
Crystal structure
engineering.material
Fourier transform infrared spectra
Phonon spectra
Gallium arsenide
chemistry.chemical_compound
Structural change
chemistry
Chemical physics
engineering
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 78
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........3657abd79d2bd5e91a5ce1e8f676cf34