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Repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown on silicon

Authors :
Baoqing Zhang
Liuyun Yang
Ding Wang
Patrick Quach
Shanshan Sheng
Duo Li
Tao Wang
Bowen Sheng
Tai Li
Jiajia Yang
Ye Yuan
Bo Shen
Xinqiang Wang
Source :
Applied Physics Letters. 121:192107
Publication Year :
2022
Publisher :
AIP Publishing, 2022.

Abstract

We report repeatable AlN/GaN resonant tunneling diodes (RTDs) grown on a silicon substrate by plasma-assisted molecular-beam epitaxy. The RTDs exhibit stable negative differential resistance without hysteresis at room temperature, where no degradation is observed even after 500 continuous bidirectional sweeps. The peak-to-valley current ratio is 1.36, and the peak current density is 24.38 kA/cm2. When the temperature is changed from 77 to 475 K, the peak current remains almost unchanged and the valley current increases gradually, resulting in a reduced peak-to-valley current ratio from 1.59 to 1.07. Our work softens the material quality constraints on realizing the room-temperature repeatable negative differential resistance and paves the way to low-cost III-nitride-based monolithic and hybrid microwave integrated circuits on large-size silicon wafers.

Details

ISSN :
10773118 and 00036951
Volume :
121
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........36418d3585c5f85b1a59415c52e7d52c