A monolithic 60 GHz diode mixer and IF amplifier in compatible technology

Authors :: G. Ebert
K.-E. Schmegner
J.-M. Dieudonne
W. Schwab
B. Adelseck
A. Colquhoun
J. Selders
Source :: IEEE Transactions on Microwave Theory and Techniques. 37:2142-2147
Publication Year :: 1989
Publisher :: Institute of Electrical and Electronics Engineers (IEEE), 1989.
Abstract: A technology is described which allows the monolithic integration of millimeter-wave Schottky diodes and MESFETs on one chip. The Schottky diodes have a cutoff frequency f/sub T/ of 2300 GHz. A monolithic 60-GHz mixer chip using these diodes shows a conversion loss of 6 dB and a noise figure (DSB) of 3.3 dB. The MESFETs have an f/sub max/ up to 70 GHz. A two-stage IF amplifier realized with this technology shows a gain of 20.6 dB and a noise figure of 1.7 dB at 4 GHz. >