Cite
New Understanding of Random Telegraph Noise Amplitude in Tunnel FETs
MLA
Yang Zhao, et al. “New Understanding of Random Telegraph Noise Amplitude in Tunnel FETs.” IEEE Transactions on Electron Devices, vol. 64, Aug. 2017, pp. 3324–30. EBSCOhost, https://doi.org/10.1109/ted.2017.2712714.
APA
Yang Zhao, Cheng Chen, Lingyi Guo, Qianqian Huang, Ru Huang, & Jiadi Zhu. (2017). New Understanding of Random Telegraph Noise Amplitude in Tunnel FETs. IEEE Transactions on Electron Devices, 64, 3324–3330. https://doi.org/10.1109/ted.2017.2712714
Chicago
Yang Zhao, Cheng Chen, Lingyi Guo, Qianqian Huang, Ru Huang, and Jiadi Zhu. 2017. “New Understanding of Random Telegraph Noise Amplitude in Tunnel FETs.” IEEE Transactions on Electron Devices 64 (August): 3324–30. doi:10.1109/ted.2017.2712714.