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Al 0 .3 Ga 0.7 N PN diode with breakdown voltage >1600 V
- Source :
- Electronics Letters. 52:1319-1321
- Publication Year :
- 2016
- Publisher :
- Institution of Engineering and Technology (IET), 2016.
-
Abstract
- Demonstration of Al0.3Ga0.7N PN diodes grown with breakdown voltages in excess of 1600 V is reported. The total epilayer thickness is 9.1 μm and was grown by metal-organic vapour-phase epitaxy on 1.3-mm-thick sapphire in order to achieve crack-free structures. A junction termination edge structure was employed to control the lateral electric fields. A current density of 3.5 kA/cm2 was achieved under DC forward bias and a reverse leakage current
- Subjects :
- 010302 applied physics
Materials science
business.industry
Wide-bandgap semiconductor
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
chemistry.chemical_compound
Reverse leakage current
chemistry
0103 physical sciences
Aluminium gallium nitride
Optoelectronics
Breakdown voltage
Metalorganic vapour phase epitaxy
Electrical and Electronic Engineering
0210 nano-technology
business
Current density
Diode
Voltage
Subjects
Details
- ISSN :
- 1350911X and 00135194
- Volume :
- 52
- Database :
- OpenAIRE
- Journal :
- Electronics Letters
- Accession number :
- edsair.doi...........35eb6f0cceff05101c6eed39ec2ad35f