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Simulation of Gate Coupling Effect on Three-Dimensionally Stacked Devices
- Source :
- ECS Meeting Abstracts. :25-25
- Publication Year :
- 2010
- Publisher :
- The Electrochemical Society, 2010.
-
Abstract
- not Available.
Details
- ISSN :
- 21512043
- Database :
- OpenAIRE
- Journal :
- ECS Meeting Abstracts
- Accession number :
- edsair.doi...........35d0ccae0c886c78df6c8d7e5799fd50
- Full Text :
- https://doi.org/10.1149/ma2010-02/1/25