Investigation of double barrier MOS tunnel diodes with PECVD silicon quantum well

Authors :: J. Grabowski
Romuald B. Beck
Bogdan Majkusiak
Andrzej Mazurak
Source :: Microelectronics Reliability. 51:1172-1177
Publication Year :: 2011
Publisher :: Elsevier BV, 2011.
Abstract: Double barrier metal–oxide–semiconductor tunnel diodes with ultrathin PECVD Si and thermal SiO 2 layers were fabricated. The measured capacitance–voltage and current–voltage characteristics were interpreted and physical parameters of the structures were extracted by means of a theoretical model.

Subjects :: Materials science
Silicon
business.industry
Analytical chemistry
chemistry.chemical_element
Condensed Matter Physics
Double barrier
Atomic and Molecular Physics, and Optics
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
chemistry
Plasma-enhanced chemical vapor deposition
Thermal
Optoelectronics
Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality
business
Quantum well
Diode

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