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Bistable gated bipolar device
- Source :
- IEEE Electron Device Letters. 24:661-663
- Publication Year :
- 2003
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2003.
-
Abstract
- We report a semiconductor device that exhibits a negative differential resistance characteristic. The device has the same structure as metal-oxide-semiconductor (MOS) transistors currently used in integrated circuits. Biasing the structure in the subthreshold regime and sweeping the bulk bias results in the negative differential resistance characteristic. The device exhibits a peak valley current ratio of approximately 52 at room temperature while drawing ten nanoampers of current which is of sufficiently low power for ultra-large scale integration (ULSI) applications.
- Subjects :
- Materials science
Bistability
business.industry
Subthreshold conduction
Bipolar junction transistor
Transistor
Semiconductor device modeling
Biasing
Hardware_PERFORMANCEANDRELIABILITY
Semiconductor device
Electronic, Optical and Magnetic Materials
law.invention
law
Hardware_INTEGRATEDCIRCUITS
Optoelectronics
Power semiconductor device
Electrical and Electronic Engineering
business
Hardware_LOGICDESIGN
Subjects
Details
- ISSN :
- 15580563 and 07413106
- Volume :
- 24
- Database :
- OpenAIRE
- Journal :
- IEEE Electron Device Letters
- Accession number :
- edsair.doi...........34b5870ef48e7a302443ba60e8af99f0
- Full Text :
- https://doi.org/10.1109/led.2003.817374