The effects of implanted nitrogen ions on the magnetic properties of Mn-implanted GaN

The effects of implanted N ions on the magnetic properties of Mn-implanted GaN were studied. The ferromagnetic signal increased when N ions were implanted into GaN prior to the implantation of Mn ions and annealed at 900°C. Synchrotron radiation photoemission spectroscopy revealed that the Ga−Mn magnetic phases contributing to ferromagnetic properties increased. Mn−N binary phases such as Mn6N258 and Mn3N2 decreased and sheet resistivity significantly increased, indicating a reduction of N-vacancies. Consequently, it is suggested that the enhancement of the ferromagnetic properties in (Mn+N)-implanted GaN originated from the decrease of N-vacancies and the increase of Ga−Mn magnetic phases.