Back to Search
Start Over
White X-Ray Radiation Effects in MOS Capacitors With Atomic Layer Deposited HfO2/Al2O3 and Al2O3/HfO2/Al2O3 Gate Dielectric Stacks for High Total Doses
- Source :
- IEEE Transactions on Device and Materials Reliability. 23:109-115
- Publication Year :
- 2023
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2023.
Details
- ISSN :
- 15582574 and 15304388
- Volume :
- 23
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Device and Materials Reliability
- Accession number :
- edsair.doi...........34587a16d873aa855d6a11e795fb23af
- Full Text :
- https://doi.org/10.1109/tdmr.2023.3234325