Energy‐resolved DLTS measurement of interface states in MIS structures

A new method is described for determining the energy of emitting centers in an interface‐state continuum independently of the emission rate in transient‐capacitance measurements on MIS structures. Deep‐level transient spectroscopy (DLTS) is performed in the double‐correlation mode to analyze the energy profile of a continuous interface‐trap distribution. With this method, DLTS can be used to evaluate interface‐state distributions with energy‐dependent capture cross sections, and the extraneous effects of bulk defect levels in the semiconductor are minimized. Experimental results are presented for electron traps at the Si‐SiO2 interface.