Total-dose hardness integrated circuit fabricated with silicon-on-diamond structured wafer

Authors :: Guangtian Zou
Changzhi Gu
Yao Da
Zengsun Jin
Qiang Meng
Lu Jian-xia
Xu Zhong-de
Su Xiu-di
Xiangyi Lu
Source :: Diamond and Related Materials. 6:673-675
Publication Year :: 1997
Publisher :: Elsevier BV, 1997.
Abstract: In this paper, we fabricated an integrated circuit with silicon-on-diamond (SOD) structured wafer. The total-dose radiation characteristics of this SOD circuit was studied using a cobalt-60 radiation source. Comparison with the same circuit using bulk silicon wafer, showed that total-dose radiation introduces a small decrease in threshold voltage and drain current to the SOD circuit.

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