Enhancement type InP metal‐insulator‐semiconductor field‐effect transistor with plasma anodic aluminium oxide as the gate insulator

Enhancement type InP metal‐insulator‐semiconductor field‐effect transistors were fabricated using plasma anodic aluminium oxide as the gate insulator. The effective electron mobilities in the surface channel are 1250 cm2/Vs and 2000 cm2/Vs at 300 and 80 K, respectively. The drift of the drain current at 300 K ceases a few minutes after applying a gate voltage and stable dc operation is observed over several hours.