High Mobility GaN films Produced by ECR-Assisted MBE

High electron mobility autodoped GaN films were produced by the ECR assisted MBE method. The net electron concentration was varied systematically from 2×1019 to 2×1017cm−3 by controlling the active nitrogen overpressure. Correspondingly, the electron mobility increased from 20 to 210 cm2V−1sec−1. The line through the experimental data also predicts the electron mobilities of GaN films produced by the CVD methods.