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Low-temperature homoepitaxial growth on Si(111) through a Pb monolayer
- Source :
- Applied Physics Letters. 73:3120-3122
- Publication Year :
- 1998
- Publisher :
- AIP Publishing, 1998.
-
Abstract
- A monolayer of Pb mediates high-quality homoepitaxial growth on Si (111) surfaces at temperatures where growth with other overlayer elements or on bare surfaces leads to amorphous or highly defective crystalline films. Nearly defect-free epitaxy proceeds for film thicknesses up to 1000 A with no sign that this is an upper limit. The minimum temperature for high-quality epitaxy depends on the substrate miscut. For a 0.2° miscut, the minimum temperature is 340 °C. Films grown on substrates miscut 2.3° towards [112] show good crystalline quality down to 310 °C.
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 73
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........330d3d56d144cbc98ea9956b9f0a08c9