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Atomic Layer Epitaxy of Silicon
- Source :
- Materials and Manufacturing Processes. 10:267-281
- Publication Year :
- 1995
- Publisher :
- Informa UK Limited, 1995.
-
Abstract
- Two methods are proposed and demonstrated successfully for low temperature atomic layer epitaxy (ALE) of Si, where H atoms play essential roles. The first method is the use of H as a self-limiting factor. Trisilane (Si3H8) was used as source gas and the substrate temperature was modulated in order to alternate steps in an ALE cycle. When the temperature was less than 380°C in the adsorption step and more than 520°C in the desorption step, respectively, the grown layer thickness per cycle was 0.8 ML/cycle. The second method is the use of atomic H as an active reducer of a self-limiting factor. A clean surface was exposed to dichlorosilane (SiH2Cl2) as source gas to grow an Si monolayer covered with CI. Next, atomic H was injected to reduce CI from the surface. An ideal monolayer growth was obtained with the substrate temperature over 540°C.
- Subjects :
- Materials science
Silicon
Trisilane
Mechanical Engineering
Analytical chemistry
Dichlorosilane
chemistry.chemical_element
Substrate (electronics)
Industrial and Manufacturing Engineering
chemistry.chemical_compound
Adsorption
chemistry
Mechanics of Materials
Desorption
Monolayer
Atomic layer epitaxy
General Materials Science
Subjects
Details
- ISSN :
- 15322475 and 10426914
- Volume :
- 10
- Database :
- OpenAIRE
- Journal :
- Materials and Manufacturing Processes
- Accession number :
- edsair.doi...........32e90370af03a736d49ee0831bb6979a