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Electroluminescence from silicon vacancy centers in diamond p–i–n diodes
- Source :
- Diamond and Related Materials. 65:42-46
- Publication Year :
- 2016
- Publisher :
- Elsevier BV, 2016.
-
Abstract
- The silicon vacancy center (SiV) in diamond is promising for future quantum applications due to its unique properties like narrowband emission in the near infrared regime at 738 nm and photostability at room temperature. In this paper we investigate the photoluminescence and electroluminescence properties of SiV centers incorporated into the intrinsic-layer of single crystalline diamond p–i–n junction diodes via in-situ doping during CVD-growth. The experiments reveal electrical excitation of the SiV emission by applying forward currents. The electroluminescence and photoluminescence properties are compared and discussed.
- Subjects :
- Photoluminescence
Materials science
Silicon
chemistry.chemical_element
02 engineering and technology
engineering.material
Electroluminescence
01 natural sciences
Vacancy defect
0103 physical sciences
Materials Chemistry
Electrical and Electronic Engineering
010306 general physics
Diode
business.industry
Mechanical Engineering
Doping
Diamond
General Chemistry
021001 nanoscience & nanotechnology
Electronic, Optical and Magnetic Materials
chemistry
engineering
Optoelectronics
0210 nano-technology
business
Excitation
Subjects
Details
- ISSN :
- 09259635
- Volume :
- 65
- Database :
- OpenAIRE
- Journal :
- Diamond and Related Materials
- Accession number :
- edsair.doi...........32de409b2a100fefc891fbf7841864f5