Accuracy assessment of strain mapping from Z-contrast images of strained nanostructures

Geometric phase and peak pairs strain mapping techniques have been applied to high angular annular dark field scanning transmission electron microscopy (HAADF-STEM) simulated images of an InAs/InP strained nanowire at different sample thicknesses. Strain values determined from HAADF-STEM images have been compared to theoretical values obtained by solving the elastic theory equation by finite element analysis, in order to analyze and assess both techniques in terms of accuracy of the predictions.