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Study on carrier mobility in graphene nanoribbons
- Source :
- 2011 International Conference on Simulation of Semiconductor Processes and Devices.
- Publication Year :
- 2011
- Publisher :
- IEEE, 2011.
-
Abstract
- In this paper, the carrier mobility in graphene nanoribbons(GNRs) is studied. The total carrier mobility calculation includes four scattering mechanisms: surface polar phonons (SPP) scattering, intrinsic acoustic phonon scattering, line-edge roughness scattering, and Coulomb scattering. Carrier SPP scattering rates for five high-κ dielectric materials, including SiO 2 , Al 2 O 3 , HfO 2 , ZrO 2 and AlN, are calculated based on Mahan's theory. SPP scattering turns out to be important for GNRs with small width. Compared to other dielectric materials, AlN is more capable of suppressing both SPP scattering and Coulomb scattering.
Details
- Database :
- OpenAIRE
- Journal :
- 2011 International Conference on Simulation of Semiconductor Processes and Devices
- Accession number :
- edsair.doi...........32abe4865644dbd34b356d0694ed3697
- Full Text :
- https://doi.org/10.1109/sispad.2011.6034959