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Study on carrier mobility in graphene nanoribbons

Authors :
Xinxin Yu
Zhiping Yu
Yaohua Tan
Jiahao Kang
He Qian
Jinyu Zhang
Source :
2011 International Conference on Simulation of Semiconductor Processes and Devices.
Publication Year :
2011
Publisher :
IEEE, 2011.

Abstract

In this paper, the carrier mobility in graphene nanoribbons(GNRs) is studied. The total carrier mobility calculation includes four scattering mechanisms: surface polar phonons (SPP) scattering, intrinsic acoustic phonon scattering, line-edge roughness scattering, and Coulomb scattering. Carrier SPP scattering rates for five high-κ dielectric materials, including SiO 2 , Al 2 O 3 , HfO 2 , ZrO 2 and AlN, are calculated based on Mahan's theory. SPP scattering turns out to be important for GNRs with small width. Compared to other dielectric materials, AlN is more capable of suppressing both SPP scattering and Coulomb scattering.

Details

Database :
OpenAIRE
Journal :
2011 International Conference on Simulation of Semiconductor Processes and Devices
Accession number :
edsair.doi...........32abe4865644dbd34b356d0694ed3697
Full Text :
https://doi.org/10.1109/sispad.2011.6034959