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A Design of Ultra Wide Band Switched-Gain Controlled Low Noise Amplifier Using 0.18 um CMOS
- Source :
- The Journal of Korean Institute of Electromagnetic Engineering and Science. 18:408-415
- Publication Year :
- 2007
- Publisher :
- Korean Institute of Electromagnetic Engineering and Science, 2007.
-
Abstract
- A switched-gain controlled LNA is designed and implemented in 0.18 um CMOS technology for UWB system. In high gain mode, measurement shows a power gain of 12.5 dB, an input IP3 of 0 dBm, while consuming only 8.13 mA of current. In low gain mode, measurement shows a power gain of -8.7 dB, an input IP3 of 9.1 dBm, while consuming only 0 mA of current.
Details
- ISSN :
- 12263133
- Volume :
- 18
- Database :
- OpenAIRE
- Journal :
- The Journal of Korean Institute of Electromagnetic Engineering and Science
- Accession number :
- edsair.doi...........32441c81df831694340051f940f0cb56
- Full Text :
- https://doi.org/10.5515/kjkiees.2007.18.4.408