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Superior N- and P-MOSFET scalability using carbon co-implantation and spike annealing
Superior N- and P-MOSFET scalability using carbon co-implantation and spike annealing
- Source :
- Solid-State Electronics. 51:1432-1436
- Publication Year :
- 2007
- Publisher :
- Elsevier BV, 2007.
-
Abstract
- We report the simultaneous improvement of both on- and off-properties for n- and p-channel MOSFETs by means of carbon co-implantation at extension level, using conventional spike annealing. For the first time, spike-annealed NFETs with phosphorus-implanted source/drain extensions (SDE) are shown to outperform conventional As-implanted devices in the deca-nanometric range. Parameters such as on-current, drain-induced barrier lowering (DIBL), external resistance (REXT) vs. effective channel length (Leff) trade-off are examined. To obtain the full benefit of carbon co-implantation, we recommend adjusting pocket, highly doped drain (HDD) and spacer parameters.
- Subjects :
- Materials science
business.industry
Co implantation
Annealing (metallurgy)
Doping
Condensed Matter Physics
Electronic, Optical and Magnetic Materials
Ion implantation
MOSFET
Scalability
Materials Chemistry
External resistance
Electronic engineering
Optoelectronics
Field-effect transistor
Electrical and Electronic Engineering
business
Subjects
Details
- ISSN :
- 00381101
- Volume :
- 51
- Database :
- OpenAIRE
- Journal :
- Solid-State Electronics
- Accession number :
- edsair.doi...........317e8a66c6e570f01ca9f7ffd7503faa
- Full Text :
- https://doi.org/10.1016/j.sse.2007.09.038