W/HfO2 gate stacks with Tinv～1.2nm and low charge trapping

Authors :: Li Yulong
Sufi Zafar
Alessandro C. Callegari
E. Gousev
G. Singco
An L. Steegen
C. Wajda
Dianne L. Lacey
Deborah A. Neumayer
F. Mc. Feely
H. Shinriki
J. Cai
Phung T. Nguyen
T. Takahashi
R. Amos
Cyril Cabral
S-H Ku
Byoung Hun Lee
Michael A. Gribelyuk
D. O'Meara
Y.Y. Wang
Victor Ku
Christopher P. D'Emic
Paul C. Jamison
Vijay Narayanan
Source :: Extended Abstracts of the 2003 International Conference on Solid State Devices and Materials.
Publication Year :: 2003
Publisher :: The Japan Society of Applied Physics, 2003.

Subjects :: Materials science
business.industry
Gate stack
Optoelectronics
Nanotechnology
Charge (physics)
Trapping
business

Database :: OpenAIRE
Journal :: Extended Abstracts of the 2003 International Conference on Solid State Devices and Materials
Accession number :: edsair.doi...........3151fcf9df7e70a020f19e3dce5cbede

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