Electron mobility in the inversion layers of fully depleted SOI films

The dependences of the electron mobility μeff in the inversion layers of fully depleted double–gate silicon-on-insulator (SOI) metal–oxide–semiconductor (MOS) transistors on the density N e of induced charge carriers and temperature T are investigated at different states of the SOI film (inversion–accumulation) from the side of one of the gates. It is shown that at a high density of induced charge carriers of N e > 6 × 1012 cm–2 the μeff(T) dependences allow the components of mobility μeff that are related to scattering at surface phonons and from the film/insulator surface roughness to be distinguished. The μeff(N e ) dependences can be approximated by the power functions μeff(N e) ∝ N − . The exponents n in the dependences and the dominant mechanisms of scattering of electrons induced near the interface between the SOI film and buried oxide are determined for different N e ranges and film states from the surface side.