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On the Origin of Blue Emission from As-Doped GaN
- Source :
- physica status solidi (b). 228:213-217
- Publication Year :
- 2001
- Publisher :
- Wiley, 2001.
-
Abstract
- As-doped GaN films have been grown by plasma-assisted molecular beam epitaxy and their properties investigated using atomic force microscopy, X-ray diffraction and photoluminescence (PL) spectroscopy. The structural properties of the As-doped GaN films improve with increasing sample thickness. The room temperature PL is dominated by a strong blue emission band, exhibiting multiple peaks centered at 2.6 eV. The number of peaks increases monotonically with sample thickness. From this we conclude that the multiple peaks in the blue emission band of As-doped GaN samples arise mainly from optical interference effects. However, the possibility of several transitions involving As being responsible for the blue emission process cannot be excluded.
- Subjects :
- Diffraction
Photoluminescence
Chemistry
Atomic force microscopy
Doping
Analytical chemistry
Astrophysics::Cosmology and Extragalactic Astrophysics
Condensed Matter Physics
Microstructure
Blue emission
Electronic, Optical and Magnetic Materials
Condensed Matter::Materials Science
Condensed Matter::Superconductivity
Spectroscopy
Astrophysics::Galaxy Astrophysics
Molecular beam epitaxy
Subjects
Details
- ISSN :
- 15213951 and 03701972
- Volume :
- 228
- Database :
- OpenAIRE
- Journal :
- physica status solidi (b)
- Accession number :
- edsair.doi...........3115df63facfd818f160a525c098ea8b