Effect of bias condition on heavy ion radiation in bipolar junction transistors

MLA

Geng Hong-bin, et al. “Effect of Bias Condition on Heavy Ion Radiation in Bipolar Junction Transistors.” Chinese Physics B, vol. 21, Aug. 2012, p. 080703. EBSCOhost, https://doi.org/10.1088/1674-1056/21/8/080703.

APA

Geng Hong-bin, Li Xing-Ji, He Shi-Yu, Liu Chao-Ming, & Yang Dezhuang. (2012). Effect of bias condition on heavy ion radiation in bipolar junction transistors. Chinese Physics B, 21, 080703. https://doi.org/10.1088/1674-1056/21/8/080703

Chicago

Geng Hong-bin, Li Xing-Ji, He Shi-Yu, Liu Chao-Ming, and Yang Dezhuang. 2012. “Effect of Bias Condition on Heavy Ion Radiation in Bipolar Junction Transistors.” Chinese Physics B 21 (August): 080703. doi:10.1088/1674-1056/21/8/080703.