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Titanium tellurite thick films prepared by electrophoretic deposition and their dielectric properties
- Source :
- Scripta Materialia. 61:536-539
- Publication Year :
- 2009
- Publisher :
- Elsevier BV, 2009.
-
Abstract
- TiTe 3 O 8 ceramics and films can be well sintered below 800 °C and consequently have the potential to be used for low-temperature co-fired ceramics. TiTe 3 O 8 thick films were fabricated by electrophoretic deposition on platinized Si substrates using TiTe 3 O 8 powders synthesized by a conventional solid-state reaction. The permittivity of TiTe 3 O 8 films is ∼54, with loss tan δ of ∼0.009, measured at 100 kHz. The temperature coefficients of permittivity of TiTe 3 O 8 films and ceramics between 35 and 200 °C are +78 and −100 ppm °C −1 , respectively.
- Subjects :
- Permittivity
Materials science
Mechanical Engineering
Metallurgy
Metals and Alloys
chemistry.chemical_element
Dielectric
Condensed Matter Physics
Electrophoretic deposition
chemistry
Mechanics of Materials
visual_art
visual_art.visual_art_medium
General Materials Science
Ceramic
Composite material
Titanium
Subjects
Details
- ISSN :
- 13596462
- Volume :
- 61
- Database :
- OpenAIRE
- Journal :
- Scripta Materialia
- Accession number :
- edsair.doi...........309c699d9b750dc68b4c5d7e220bc169