Titanium tellurite thick films prepared by electrophoretic deposition and their dielectric properties

TiTe 3 O 8 ceramics and films can be well sintered below 800 °C and consequently have the potential to be used for low-temperature co-fired ceramics. TiTe 3 O 8 thick films were fabricated by electrophoretic deposition on platinized Si substrates using TiTe 3 O 8 powders synthesized by a conventional solid-state reaction. The permittivity of TiTe 3 O 8 films is ∼54, with loss tan δ of ∼0.009, measured at 100 kHz. The temperature coefficients of permittivity of TiTe 3 O 8 films and ceramics between 35 and 200 °C are +78 and −100 ppm °C −1 , respectively.