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(Invited) Atomically Controlled Processing for Dopant Segregation in CVD Silicon and Germanium Epitaxial Growth
- Source :
- ECS Transactions. 79:33-42
- Publication Year :
- 2017
- Publisher :
- The Electrochemical Society, 2017.
Details
- ISSN :
- 19385862 and 19386737
- Volume :
- 79
- Database :
- OpenAIRE
- Journal :
- ECS Transactions
- Accession number :
- edsair.doi...........30901b735b9b49d7c1d9fbcbd4fc2e0c