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Chemical dynamics of ≡SiOC.O radicals grafted on the activated silica surface

Authors :
Vladimir I. Pergushov
Source :
Russian Chemical Bulletin. 49:1834-1837
Publication Year :
2000
Publisher :
Springer Science and Business Media LLC, 2000.

Abstract

The chemical dynamics of≡SiOC.O radicals grafted on the silica surface was studied in the 77–290 K temperature interval. The rotation diffusion coefficients and characteristic times of rotational mobility of the radicals were estimated.

Subjects

Subjects :
Condensed Matter::Soft Condensed Matter
chemistry.chemical_compound
Chemistry
Radical
Diffusion
Physical chemistry
Nitroxyl
General Chemistry
Photochemistry
Fumed silica
Chemical Dynamics

Details

ISSN :
15739171 and 10665285
Volume :
49
Database :
OpenAIRE
Journal :
Russian Chemical Bulletin
Accession number :
edsair.doi...........307bcee6b513c65013b90d66974f9454

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